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| PD -94916 IRG4IBC20KDPBF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C Short Circuit Rated UltraFast IGBT VCES = 600V * High switching speed optimized for up to 25kHz with low VCE(on) * Short Circuit Rating 10s @ 125C, VGE = 15V * Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation * IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations * Industry standard TO-220 FULLPAK * Lead-Free G E VCE(on) typ. = 2.27V @VGE = 15V, IC = 6.3A n-channel Benefits * Generation 4 IGBTs offer highest efficiencies available maximizing the power density of the system * IGBTs optimized for specific application conditions * HEXFREDTM diodes optimized for performance with IGBTs. Minimized recovery characteristics reduce noise EMI * Designed to exceed the power handling capability of equivalent industry-standard IGBTs TO-220 FULLP AK Absolute Maximum Ratings Parameter VCES IC @ TC = 25C IC @ TC = 100C ICM ILM IF @ TC = 100C IFM tsc VISOL VGE PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time RMS Isolation Voltage, Terminal to Case, t = 1 min Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw. Max. 600 11.5 6.3 23 24 6.3 24 10 2500 20 34 14 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf*in (1.1 N*m) Units V A s V W C Thermal Resistance Parameter RJC RCS RJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Junction-to-Ambient, typical socket mount Weight Typ. --- --- --- 2.0 (0.07) Max. 3.7 5.5 65 --- Units C/W g (oz) www.irf.com 1 12/30/03 IRG4IBC20KDPBF Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)CES V(BR)CES/TJ VCE(on) VGE(th) VGE(th)/TJ gfe ICES VFM IGES Parameter Min. Typ. Max. Units Collector-to-Emitter Breakdown Voltage 600 -- -- V Temperature Coeff. of Breakdown Voltage -- 0.49 -- V/C Collector-to-Emitter Saturation Voltage -- 2.27 2.8 -- 3.01 -- V -- 2.43 -- Gate Threshold Voltage 3.0 -- 6.0 Temperature Coeff. of Threshold Voltage -- -10 -- mV/C Forward Transconductance 2.9 4.3 -- S Zero Gate Voltage Collector Current -- -- 250 A -- -- 1000 Diode Forward Voltage Drop -- 1.4 1.7 V -- 1.3 1.6 Gate-to-Emitter Leakage Current -- -- 100 nA Conditions VGE = 0V, IC = 250A VGE = 0V, IC = 1.0mA IC = 9.0A VGE = 15V See Fig. 2, 5 IC = 16A IC = 9.0A, TJ = 150C VCE = VGE, IC = 250A VCE = VGE, IC = 250A VCE = 100V, IC = 9.0A VGE = 0V, VCE = 600V VGE = 0V, VCE = 600V, TJ = 150C IC = 8.0A See Fig. 13 IC = 8.0A, TJ = 150C VGE = 20V Switching Characteristics @ TJ = 25C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets tsc td(on) tr td(off) tf Ets LE Cies Coes Cres trr Irr Qrr di(rec)M/dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge Diode Peak Rate of Fall of Recovery During tb Min. -- -- -- -- -- -- -- -- -- -- 10 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. Max. Units Conditions 34 51 IC = 9.0A 4.9 7.4 nC VCC = 400V See Fig.8 14 21 VGE = 15V 54 -- 34 -- TJ = 25C ns 180 270 IC = 9.0A, VCC = 480V 72 110 VGE = 15V, RG = 50 0.34 -- Energy losses include "tail" 0.30 -- mJ and diode reverse recovery 0.64 0.96 See Fig. 9,10,14 -- -- s VCC = 360V, TJ = 125C VGE = 15V, RG = 50 , VCPK < 500V 51 -- TJ = 150C, See Fig. 10,11,14 37 -- IC = 9.0A, VCC = 480V ns 220 -- VGE = 15V, RG = 50 160 -- Energy losses include "tail" 0.85 -- mJ and diode reverse recovery 7.5 -- nH Measured 5mm from package 450 -- VGE = 0V 61 -- pF VCC = 30V See Fig. 7 14 -- = 1.0MHz 37 55 ns TJ = 25C See Fig. 55 90 TJ = 125C 14 IF = 8.0A 3.5 5.0 A TJ = 25C See Fig. 4.5 8.0 TJ = 125C 15 VR = 200V 65 138 nC TJ = 25C See Fig. 124 360 TJ = 125C 16 di/dt = 200As 240 -- A/s TJ = 25C See Fig. 210 -- TJ = 125C 17 2 www.irf.com IRG4IBC20KDPBF 8 7 For both: LOAD CURRENT (A) 6 5 4 3 2 Ideal diodes Duty cycle: 50% TJ = 125C Tsink = 90C Gate drive as specified Power Dissipation = 9.5 W Square wave: 60% of rated voltage I 1 0 0.1 1 10 100 f, Frequency (KHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 100 100 I C , Collector-to-Emitter Current (A) TJ = 25 o C TJ = 150 o C 10 I C, Collector-to-Emitter Current (A) 10 TJ = 150 o C TJ = 25 oC V CC = 50V 5s PULSE WIDTH 5 10 15 20 1 V GE = 15V 20s PULSE WIDTH 1 10 1 VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics www.irf.com 3 IRG4IBC20KDPBF 12 5.0 10 VCE , Collector-to-Emitter Voltage(V) VGE = 15V 80 us PULSE WIDTH IC = 18 A Maximum DC Collector Current(A) 4.0 8 6 3.0 4 IC = 9.0A 9A 2.0 IC = 4.5 A 2 0 25 50 75 100 125 150 TC , Case Temperature ( C) 1.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( C) Fig. 4 - Maximum Collector Current vs. Case Temperature 10 Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature Thermal Response (Z thJC ) D = 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 10 PDM t1 t2 0.01 0.00001 t1, Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4IBC20KDPBF 800 VGE , Gate-to-Emitter Voltage (V) 100 VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc 20 VCC = 400V I C = 9.0A C, Capacitance (pF) 600 16 Cies 400 12 8 200 Coes Cres 4 0 1 10 0 VCE , Collector-to-Emitter Voltage (V) 0 10 20 30 40 QG , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage 0.8 Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 10 Total Switching Losses (mJ) Total Switching Losses (mJ) V CC = 480V V GE = 15V TJ = 25 C I C = 9.0A RG 50 = Ohm VGE = 15V VCC = 480V IC = 18 A 0.7 1 IC = 9.0A 9A IC = 4.5 A 0.6 0.5 0 10 20 30 40 50 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 RG , Gate Resistance ( (Ohm) RG , Gate Resistance ) TJ , Junction Temperature ( C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Junction Temperature www.irf.com 5 IRG4IBC20KDPBF 3.0 Total Switching Losses (mJ) 2.0 I C , Collector Current (A) RG TJ VCC VGE = 50 Ohm = 150 C = 480V = 15V 100 VGE = 20V T J = 125 o C 10 1.0 0.0 0 4 8 12 16 20 1 SAFE OPERATING AREA 1 10 100 1000 I C, Collector-to-emitter Current (A) VCE, Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 100 Fig. 12 - Turn-Off SOA Instantaneous Forward Current - I F (A) 10 TJ = 150C TJ = 125C TJ = 25C 1 0.1 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 Forward Voltage Drop - V FM (V) Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current 6 www.irf.com IRG4IBC20KDPBF 100 100 VR = 200V TJ = 125C TJ = 25C 80 VR = 200V TJ = 125C TJ = 25C IF = 16A I F = 8.0A I IRRM - (A) t rr - (ns) 60 10 I F = 16A IF = 8.0A I F = 4.0A 40 I F = 4.0A 20 0 100 di f /dt - (A/s) 1000 1 100 di f /dt - (A/s) 1000 Fig. 14 - Typical Reverse Recovery vs. dif/dt 500 Fig. 15 - Typical Recovery Current vs. dif/dt 10000 VR = 200V TJ = 125C TJ = 25C 400 VR = 200V TJ = 125C TJ = 25C 300 di(rec)M/dt - (A/s) Q RR - (nC) I F = 16A 200 1000 IF = 4.0A IF = 8.0A I F = 16A I F = 8.0A 100 IF = 4.0A 0 100 100 100 di f /dt - (A/s) 1000 di f /dt - (A/s) 1000 Fig. 16 - Typical Stored Charge vs. dif/dt Fig. 17 - Typical di(rec)M/dt vs. dif/dt www.irf.com 7 IRG4IBC20KDPBF Same type device as D.U.T. 90% Vge +Vge Vce 80% of Vce 430F D.U.T. Ic 10% Vce 90% Ic Ic 5% Ic td(off) tf Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf Eoff = t1+5S Vce Ic Vceic dtdt t1 t1 t2 Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf GATE VOLTAGE D.U.T. 10% +Vg +Vg Ic trr Qrr = trr id dt Ic dt tx tx 10% Vcc Vce Vcc 10% Ic 90% Ic DUT VOLTAGE AND CURRENT Ipk 10% Irr Vcc Vpk Irr Ic DIODE RECOVERY WAVEFORMS td(on) tr 5% Vce t2 Vce Ic Eon = Vce ie dtdt t1 t1 t2 DIODE REVERSE RECOVERY ENERGY t3 t4 Erec = Vd id dtdt Vc Ic t3 t4 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr 8 www.irf.com IRG4IBC20KDPBF Vg GATE SIGNAL DEVICE UNDER TEST CURRENT D.U.T. VOLTAGE IN D.U.T. CURRENT IN D1 t0 t1 t2 Figure 18e. Macro Waveforms for Figure 18a's Test Circuit L 1000V 50V 6000F 100V Vc* D.U.T. RL= 0 - 480V 480V 4 X IC @25C Figure 19. Clamped Inductive Load Test Circuit Figure 20. Pulsed Collector Current Test Circuit www.irf.com 9 IRG4IBC20KDPBF Notes: Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20) VCC=80%(VCES), VGE=20V, L=10H, RG= 50 (figure 19) Pulse width 80s; duty factor 0.1%. Pulse width 5.0s, single shot. TO-220 Full-Pak Package Outline Dimensions are shown in millimeters (inches) TO-220 Full-Pak Part Marking Information E XA M P L E : T H IS IS A N IRF I8 4 0 G W IT H A S S E M B L Y LO T C O D E 3 432 AS SEM B LE D O N W W 24 199 9 IN TH E A S S E M B L Y L IN E "K " IN TE R N A T IO N A L R E C T IF IE R LOGO ASS EM B LY LO T C O D E P A RT N U M B E R IR FI8 40 G 924 K 34 32 Note: "P" in assembly line position indicates "Lead-Free" D A TE C O D E YE A R 9 = 1 9 9 9 W E EK 24 L IN E K Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.12/03 10 www.irf.com |
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